MAPLST1617-030CF rf power field effect transistor ldmos, 1600 ? 1700 mhz, 30w, 28v features designed for inmarsat applications in the 1620-1670 mhz frequency band. typical two tone performance (imd=-30 dbc): average output power: 15w gain: 14db (typ.) efficiency: 38% (typ.) 10:1 vswr ruggedness at 30w, 28v, 1670mhz) MAPLST1617-030CF package style 5/5/05 preliminary maximum ratings parameter symbol rating units drain?source voltage v dss 65 v dc gate?source voltage v gs 20 v dc total power dissipation @ t c = 25 c p d 97 w storage temperature t stg -40 to +150 c junction temperature t j +200 c characteristic symbol thermal resistance, junction to case r jc max 1.8 unit oc/w thermal characteristics note? caution ?mos devices are susceptible to damage from electr ostatic charge. precauti ons in handling and packaging mos devices should be observed.
rf power ldmos transistor, 1600? 1700 mhz, 30w, 28v MAPLST1617-030CF 5/5/05 preliminary characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0) i gss ? ? 1 adc on characteristics dynamic characteristics (1) functional tests (in m/a- com test fixture) (2) characteristic symbol min typ max unit dc characteristics @ 25oc drain-source breakdown voltage (v gs = 0 vdc, i d = 20 adc) v (br)dss 65 ? ? vdc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0) i gss ? ? 1 adc gate threshold voltage (v ds = 10 vdc, i d = 1 ma) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 250 ma) v ds(q) 2 ? 4.5 vdc drain-source on-voltage (v gs = 10 vdc, i d = 1 a) v ds(on) ? 0.2 ? vdc forward transconductance (v gs = 10 vdc, i d = 1 a) gm ? 1.2 ? s dynamic characteristics @ 25oc input capacitance (including input matching capacitor in package) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c iss ? 90 ? pf output capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c oss ? 32.5 ? pf reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 1.5 ? pf rf functional tests @ 25oc (in m/a-com test fixture) cw gain (v ds = 28 vdc, p out = 30 w (avg.), i dq = 250 ma, f0 = 1670 mhz) g ps ? 14 ? db cw drain efficiency (v ds = 28 vdc, p out = 30 w (avg.), i dq = 250 ma, f0 = 1670 mhz) eff ( ? ) ? 50 ? % cw input return loss (v ds = 28 vdc, p out = 30 w (avg.), i dq = 250 ma, f0 = 1670 mhz) irl ? -10 -9 db imd (v ds = 28 vdc, p out = 15 w (avg.) (30 w pep), i dq = 250 ma, f0 = 1670 mhz, f1 = 1670.1 mhz) imd ? -30 ? dbc output vswr tolerance (v ds = 28 vdc, p out = 30 w (avg.), i dq = 250 ma, f0 = 1670 mhz) no degradation in output power before and after test 2
rf power ldmos transistor, 1600? 1700 mhz, 30w, 28v MAPLST1617-030CF 5/5/05 preliminary figure 1. 1620?1670 mhz test fixture schematic figure 2. 1620?1670 mhz test fixture component layout 3 c1,c7 electrolytic surface mt. cap., 100 f c2,c8 ceramic chip capacitor, 0.1 f c3,c9 ceramic chip capacitor, 1000 pf c4,c5,c10,c13 chip capacitor, 10 pf atc100b c6,c11 chip capacitor, 1.2 pf atc100b c12 chip capacitor, 1.0 pf atc100b j1,j2 sma connector, omni spectra 2052-5636-02 l1,l2 inductor, 35.5 nh, coilcraft b09t p1,p2 connector, amp 640457-4 q1 transistor, MAPLST1617-030CF r1 chip resistor (0805), 10k ohm r2 chip resistor (0805), 10 ohm z1 distributed microstrip element, 0.820? x 0.082? z2 distributed microstrip element, 0.590? x 0.082? z3 distributed microstrip element, 0.370? x 0.160? z4 distributed microstrip element, 0.320? x 0.300? z5 distributed microstrip element, 0.140? x 0.300? z6 distributed microstrip element, 0.040? x 0.660? z7 distributed microstrip element, 0.186? x 0.660? z8 distributed microstrip element, 0.425? x 0.380? z9 distributed microstrip element, 0.150? x 0.082? z10 distributed microstrip element, 0.610? x 0.082? z11 distributed microstrip element, 0.820? x 0.082? pc board (74350132-01), arlon (gx03005522) woven glassteflon .031? thick, er=2.5, 2 oz copper both sides
rf power ldmos transistor, 1600? 1700 mhz, 30w, 28v MAPLST1617-030CF 5/5/05 preliminary 4 graph 1. cw: gain and efficiency vs. output power graph 2. two tone: intermodulation distortion vs. output power 4 1670 mhz, 28v, i dq = 250ma 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 33 38 42 44 46 pout (dbm ) gain (db) 5 15 25 35 45 55 drain eff (%) gain eff 1670 mhz, 28v, i dq = 250ma (2-tone, 100khz spacing) -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 33 35 36 37 38 39 40 41 42 pout (dbm-avg.) imd (dbc) 1.67ghz (im3) 1.67ghz (im5)
rf power ldmos transistor, 1600? 1700 mhz, 30w, 28v MAPLST1617-030CF 5/5/05 preliminary package dimensions m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. visit www.macom.com for additional data sheets and product information. ? north america: tel. (800) 366-2266 ? asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 ? europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 5
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